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1. product profile 1.1 general description 160 w ldmos power transistor for base st ation applications at frequencies from 2000 mhz to 2200 mhz. [1] test signal: 3gpp; test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5 mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for w-cdma base statio ns and multi carrier applications in the 2000 mhz to 2200 mhz frequency range BLF7G22L-160; blf7g22ls-160 power ldmos transistor rev. 2.1 ? 2 november 2011 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. mode of operation f i dq v ds p l(av) g p ? d acpr (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2110 to 2170 1300 28 43 18.0 30 ? 32 [1]
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 2 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol BLF7G22L-160 (sot502a) 1drain 2gate 3source [1] blf7g22ls-160 (sot502b) 1drain 2gate 3source [1] 3 2 1 sym112 1 3 2 3 2 1 sym112 1 3 2 table 3. ordering information type number package name description version BLF7G22L-160 - flanged ldmost ceramic package; 2 mounting holes; 2 leads sot502a blf7g22ls-160 - earless flanged ldmost ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v i d drain current - 36 a t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 55 w 0.29 k/w
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 3 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the BLF7G22L-160 and blf7g22ls-160 are ca pable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq =1300ma; p l = 160 w; f = 2110 mhz. table 6. characteristics t j = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =2.16ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 216 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 4.5 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 34 - - a i gss gate leakage current v gs =11v; v ds = 0 v - - 450 na g fs forward transconductance v ds =10v; i d =10.8a - 20 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =7.56a -0.06- ? table 7. application information mode of operation: 2-carrier w-cdma; par 8. 4 db at 0.01 % probability on ccdf; 3gpp test model 1; 64 pdpch; f 1 = 2112.5 mhz; f 2 = 2117.5 mhz; f 3 = 2162.5 mhz; f 4 = 2167.5 mhz; rf performance at v ds = 28 v; i dq = 1300 ma; t case = 25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 43 w 16.5 18.0 - db rl in input return loss p l(av) = 43 w - ? 15 ? 6.5 db ? d drain efficiency p l(av) = 43 w 27 30 - % acpr 5m adjacent channel power ratio (5 mhz) p l(av) = 43 w - ? 32 ? 28 dbc table 8. application information mode of operation: 1-carrier w-cdma; par 7. 2 db at 0.01 % probability on ccdf; 3gpp test model 1; 64 pdpch; f = 2167. 5 mhz; rf performance at v ds = 28 v; i dq = 1300 ma; t case = 25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit par o output peak-to-average ratio p l(av) =100w; at 0.01 % probability on ccdf 3.9 4.15 - db
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 4 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor 7.2 2-carrier w-cdma 5 mhz v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2170 mhz fig 1. power gain and drain efficiency as function of load power; typical values v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2170 mhz v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2170 mhz fig 2. adjacent channel power ratio ( ? 5 mhz) as a function of load power; typical values fig 3. adjacent channel power ratio ( ? 10 mhz) as a function of load power; typical values p l (dbm) 28 53 48 38 43 33 001aan987 16 18 14 20 22 g p (db) 12 20 30 10 40 50 d (%) 0 (1) (2) g p d p l (dbm) 28 53 48 38 43 33 001aan988 -40 -30 -50 -20 -10 acpr 5m (dbc) -60 (2) f - 5 mhz f + 5 mhz (1) p l (dbm) 28 53 48 38 43 33 001aan989 -50 -40 -60 -30 -20 acpr 10m (dbc) -70 (1) (2) f - 10 mhz f + 10 mhz
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 5 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor 7.3 2-carrier w-cdma 10 mhz v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2170 mhz v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2170 mhz fig 4. input return loss as function of load power; typical values fig 5. peak-to-average power ration as function of load power; typical values p l (dbm) 28 53 48 38 43 33 001aan990 20 10 30 40 rl in (db) 0 (1) (2) p l (dbm) 28 53 48 38 43 33 001aan991 3 6 9 par (db) 0 (2) (1) v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2170 mhz fig 6. power gain and drain efficiency as function of load power; typical values p l (dbm) 28 53 48 38 43 33 001aan992 16 18 14 20 22 12 20 30 10 40 50 d (%) 0 g p (db) d (1) (2) g p
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 6 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor 7.4 1-carrier w-cdma v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2170 mhz v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2170 mhz fig 7. adjacent channel power ratio ( ? 5 mhz) as a function of load power; typical values fig 8. adjacent channel power ratio ( ? 10 mhz) as a function of load power; typical values p l (dbm) 28 53 48 38 43 33 001aan993 -50 -30 -10 acpr 5m (dbc) -70 (2) f - 5 mhz f + 5 mhz (1) p l (dbm) 28 53 48 38 43 33 001aan994 -50 -30 -10 acpr 10m (dbc) -70 f - 10 mhz f + 10 mhz (2) (1) v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2170 mhz fig 9. power gain and drain efficiency as function of load power; typical values p l (dbm) 28 53 48 38 43 33 001aan995 16 18 14 20 22 g p (db) 12 20 30 10 40 50 d (%) 0 g p d (1) (2)
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 7 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2170 mhz v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2170 mhz fig 10. adjacent channel power ratio ( ? 5 mhz) as a function of load power; typical values fig 11. adjacent channel power ratio ( ? 10 mhz) as a function of load power; typical values v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2170 mhz fig 12. peak-to-average power ration as function of load power; typical values p l (dbm) 28 53 48 38 43 33 001aan996 -50 -40 -60 -30 -20 acpr 5m (dbc) -70 (2) f - 5 mhz f + 5 mhz (1) p l (dbm) 28 53 48 38 43 33 001aan997 -60 -50 -40 acpr 10m (dbc) -70 (2) f - 10 mhz f + 10 mhz (1) p l (dbm) 28 53 48 38 43 33 001aan998 4 2 6 8 par (db) 0 (1) (2)
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 8 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor 7.5 is-95 v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2170 mhz fig 13. power gain and drain efficiency as function of load power; typical values v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz; f + 885 khz (2) f = 2170 mhz; f + 885 khz (3) f = 2110 mhz; f ? 885 khz (4) f = 2170 mhz; f ? 885 khz v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz; f + 1980 khz (2) f = 2170 mhz; f + 1980 khz (3) f = 2110 mhz; f ? 1980 khz (4) f = 2170 mhz; f ? 1980 khz fig 14. adjacent channel power ratio ( ? 5 mhz) as a function of load power; typical values fig 15. adjacent channel power ratio ( ? 10 mhz) as a function of load power; typical values p l (dbm) 28 53 48 38 43 33 001aan999 16 18 14 20 22 g p (db) 12 20 30 10 40 50 d (%) 0 g p d (1) (2) p l (dbm) 28 53 48 38 43 33 001aao000 -50 -40 -60 -30 -20 acpr 885k (dbc) -70 (3) (4) (2) (1) p l (dbm) 28 53 48 38 43 33 001aao001 -70 -80 -60 -50 acpr 1980k (dbc) -90 (3) (4) (1) (2)
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 9 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor 7.6 cw v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2170 mhz fig 16. peak-to-average power ration as function of load power; typical values p l (dbm) 28 53 48 38 43 33 001aao002 4 8 12 par (db) 0 (1) (2) v ds = 28 v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2170 mhz fig 17. power gain and drain efficiency as function of load power; typical values 001aao003 p l (dbm) 38 56 50 44 16 18 14 20 22 g p (db) 12 24 36 12 48 60 d (%) 0 d g p (2) (1)
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 10 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor 7.7 cw-pulsed v ds = 28 v; i dq = 1300 ma; t p = 0.10 ms; ? = 10 %. (1) f = 2110 mhz (2) f = 2170 mhz fig 18. power gain and drain efficiency as function of load power; typical values 001aao004 p l (dbm) 38 56 50 44 16 18 14 20 22 g p (db) 12 24 36 12 48 60 d (%) 0 d g p (2) (1)
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 11 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor 7.8 test circuit [1] american technical ce ramics type 800b or capacitor of same quality. [2] american technical ce ramics type 100a or capacitor of same quality. [3] tdk or capacitor of same quality. printed-circuit board (pcb): taconic rf35; ? r = 3.5; thickness = 0.76 mm; thickness copper plating = 35 ? m. see table 9 for a list of components. fig 19. component layout for class-ab production test circuit nxp blf7g22l(s)-160 input rev 01 r1 c1 c5 c11 c8 c13 c15 c9 c6 c3 50.0 mm 50.0 mm 60.0 mm 60.0 mm nxp BLF7G22L-160 output rev 01 001aao005 table 9. list of components for test circuit see figure 19 . component description value remarks c1, c5, c8, c9 multilayer ceramic chip capacitor 68 pf [1] c3, c11 multilayer ceramic chip capacitor 820 pf [2] c6, c13 multilayer ceramic chip capacitor 10 ? f [3] c15 electrolytic capacitor 470 ? f; 63 v r1 smd resistor 12 ? philips 1206
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 12 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor 7.9 impedance information table 10. typical impedance typical values unless otherwise specified. f z s z l mhz ? ? 2050 1.39 ?? j4.13 1.41 ? j3.80 2080 1.67 ? j3.93 1.38 ?? j3.63 2110 2.01 ? j3.89 1.35 ??? j3.45 2140 2.28 ??? j4.09 1.33 ?? j3.28 2170 2.27 ? j4.47 1.31 ? j3.12 2200 1.92 ??? j4.76 1.28 ?? j2.95 2230 1.42 ? j4.75 1.26 ?? j2.79 fig 20. definition of transistor impedance 001aaf059 drain z l z s gate
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 13 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor 8. package outline fig 21. package outline sot502a references outline version european projection issue date iec jedec jeita sot502a 99-12-28 03-01-10 0 5 10 mm scale flanged ldmost ceramic package; 2 mounting holes; 2 leads sot502a p l a f b d u 2 h q c 1 3 2 d 1 e a c q u 1 c b e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 0.51 27.94 qw 2 w 1 f 1.14 0.89 u 1 34.16 33.91 l 5.33 4.32 p 3.38 3.12 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.01 0.02 1.100 0.045 0.035 1.345 1.335 0.210 0.170 0.133 0.123 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions) w 1 ab m m m
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 14 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor fig 22. package outline sot502b references outline version european projection issue date iec jedec jeita sot502b 03-01-10 07-05-09 0 5 10 mm scale earless flanged ldmost ceramic package; 2 leads sot502b a f b d u 2 l h q c 1 3 2 d 1 e d u 1 d e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 w 2 f 1.14 0.89 u 1 20.70 20.45 l 5.33 4.32 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.010 0.045 0.035 0.815 0.805 0.210 0.170 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions)
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 15 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor 9. abbreviations 10. revision history table 11. abbreviations acronym description 3gpp third generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel esd electrostatic discharge ldmos laterally diffused metal oxide semiconductor ldmost laterally diffused metal oxide semiconductor transistor par peak-to-average power ratio pdpch transmission power of the dedicated physical channel rf radio frequency smd surface mounted device vswr voltage standing wave ratio w-cdma wideband code division multiple access table 12. revision history document id release date data sheet status change notice supersedes BLF7G22L-160_7g22ls-160 v.2.1 20111102 product data sheet - BLF7G22L-160_7g22ls-160 v.2 modifications: ? ta b l e 3 : amended package descriptions BLF7G22L-160_7g22ls-160 v.2 20111020 product data sheet - BLF7G22L-160_7g22ls-160 v.1 modifications: ? the status of this document has been changed to product data sheet ? table 7 on page 3 : the minimum value for ? d has been changed BLF7G22L-160_7g22ls-160 v.1 20110427 preliminary data sheet - -
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 16 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor 11. legal information 11.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 11.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 11.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? 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stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLF7G22L-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1 ? 2 november 2011 17 of 18 nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 11.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 12. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLF7G22L-160; blf7g22ls-160 power ldmos transistor ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 2 november 2011 document identifier: BLF7G22L-160_7g22ls-160 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 13. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation . . . . . . . . . 3 7.2 2-carrier w-cdma 5 mhz . . . . . . . . . . . . . . . . 4 7.3 2-carrier w-cdma 10 mhz . . . . . . . . . . . . . . . 5 7.4 1-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 6 7.5 is-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 7.6 cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7.7 cw-pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7.8 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 7.9 impedance information . . . . . . . . . . . . . . . . . . 12 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 9 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 11 legal information. . . . . . . . . . . . . . . . . . . . . . . 16 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 11.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 11.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 12 contact information. . . . . . . . . . . . . . . . . . . . . 17 13 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

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